| PART |
Description |
Maker |
| CM600HA-28H |
High Voltage Insulated Gate Bipolar Transistor (HVIGBT) Modules
HIGH POWER SWITCHING USE INSULATED TYPE 大功率开关使用绝缘型
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
Powerex, Inc.
|
| CM400DY-50H |
High Voltage Insulated Gate Bipolar Transistor (HVIGBT) Modules
|
Mitsubishi Electric Corporation
|
| CM800HA-66H |
High Voltage Insulated Gate Bipolar Transistor (HVIGBT) Modules
|
Mitsubishi Electric Corporation
|
| GT15M321 |
INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONS
TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT
|
TOSHIBA[Toshiba Semiconductor]
|
| BU4069F BU4069FV BU4069UB-E2 BU4069UBF-E2 BU4069UB |
4000/14000/40000 SERIES, QUAD 2-INPUT NAND GATE, PDSO14
High Voltage CMOS Logic ICs
High Voltage CMOS Logic ICs Gate
|
http://
Rohm
|
| AP28G40GEM-HF AP28G40GEM-HF-14 |
N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR
High Peak Current Capability
|
Advanced Power Electronics Corp.
Advanced Power Electronics ...
|
| AP30G120CSW-HF AP30G120CSW-HF-14 |
N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR WITH FRD
High Speed Switching
|
Advanced Power Electronics Corp.
Advanced Power Electron...
|
| IRG4PH40K |
1200V UltraFast 4-20 kHz Discrete IGBT in a TO-247AC package
INSULATED GATE BIPOLAR TRANSISTOR(Vces=1200V, Vce(on)typ.=2.74V, @Vge=15V, Ic=15A)
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
|
IRF[International Rectifier]
|
| NTE3320 |
Insulated Gate Bipolar Transistor N-Channel Enhancement Mode, High Speed Switch
|
NTE[NTE Electronics]
|
| NTE3322 NTE3321 |
Insulated Gate Bipolar Transistor N-Channel Enhancement Mode, High Speed Switch
Insulated Gate Bipolar Transistor N-Channel Enhancement Mode High Speed Switch
|
NTE[NTE Electronics]
|
